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Ordering number : ENN7754
MCH5818
MCH5818
Features
•
MOSFET : P-Channel Silicon
MOSFET SBD : Schottky Barrier Diode
DC / DC Converter Applications
Composite type with a P-Channel Sillicon
MOSFET (MCH3339) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mounting.
[
MOSFET] • Low ON-resistance.
• Ultrahigh-speed switching.
[SBD] • Short reverse recovery time.
• Low forward
voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [
MOSFET] Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak R...