ME70N03S/ME70N03S-G
30V N-Channel Enhancement Mode
MOSFET
GENERAL DESCRIPTION
The ME70N03S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are
FEATURES
● RDS(ON)≦6.
6mΩ@VGS=10V ● RDS(ON)≦11mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
particularly suited for low
voltage application such as cellular
capability
phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power...