P-Channel 30-V(D-S)
MOSFET
GENERAL DESCRIPTION
The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology .
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package.
PIN CONFIGURATION
(DFN 3x3) Botton View
ME7809/ME7809-G
FEATURES
● RDS(ON)≦10mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Pow...