MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high
voltage–blocking capability.
Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time.
Fast switching characteristics result in efficient operation at high frequencies.
• • • • Industry Standard High Power TO–264 Package (TO–3PBL) High Speed Eoff: 273 mJ/A typical at 125°C High Short Circuit Capability – 10 ms minimum Robust High
Voltage Termination
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