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MGY25N120

ON
Part Number MGY25N120
Manufacturer ON
Description Insulated Gate Bipolar Transistor
Published Apr 27, 2005
Detailed Description MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor...
Datasheet PDF File MGY25N120 PDF File

MGY25N120
MGY25N120

Overview
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability.
Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time.
Fast switching characteristics result in efficient operation at high frequencies.
• • • • Industry Standard High Power TO–264 Package (TO–3PBL) High Speed Eoff: 216 mJ/A typical at 125°C High Short Circuit Capability – 10 ms minimum Robust High Voltage Termination ™ Data Sheet MGY25N120 Motorola Preferred Device IGBT IN TO–264 25 A @ 90°C 38 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED C G G E C E CASE 340G–02 STYLE 5 TO–264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.
0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw (1) Pulse width is limited by maximum junction temperature.
Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented.
SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RθJC RθJA TL Value 1200 1200 ±20 38 25 76 212 1.
69 – 55 to 150 10 0.
6 35 260 10 lbfSin (1.
13 NSm) Unit Vdc Vdc Vdc ...


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