isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= 200V (Min.
) ·High DC Current Gain-
: hFE= 400(Min.
)@IC= 10A ·Low Collector Saturation
Voltage-
: VCE (sat)= 1.
0V(Max.
)@ IC= 5.
0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose
amplifiers, low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base
Voltage
200
VCEO
Collector-Emitter
Voltage
200
VEBO
Emitter-Base
Voltage
5
IC
Collector Current-Continunous
15
ICM
Collector Current-Peak
30
IB
Base Current-Continunous...