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MJ11029

Part Number	MJ11029
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·Hig...
Datasheet	MJ11029 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= -25A : hFE= 400(Min.
)@IC= -50A ·Complement to the NPN MJ11028 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ11029 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -50 A ICM Collector Current-Peak -100 A IB Base Curre...

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