isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage
: V(BR)CEO= 90V(Min.
) ·High DC Current Gain-
: hFE= 1000(Min.
)@IC= 25A : hFE= 400(Min.
)@IC= 50A ·Complement to the PNP MJ11031 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
90
V
VCEO
Collector-Emitter
Voltage
90
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continunous
50
A
ICM
Collector Current-Peak
100
A
IB
Base Current-Continunous
...