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MJ11030

Part Number	MJ11030
Manufacturer	ON
Description	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Published	May 7, 2005
Detailed Description	MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Curren...
Datasheet	MJ11030 PDF File

Overview

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.
Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with Built−In Base−Emitter Shunt Resistor • Junction Temperature to + 200_C • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage MJ11028/29 MJ11030 MJ11032/33 VCEO 60 Vdc 90 120...

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