SEMICONDUCTOR
TECHNICAL DATA
MJD112/L
EPITAXIAL PLANAR NPN TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES High DC Current Gain.
: hFE=1000(Min.
), VCE=4V, IC=1A.
Low Collector-Emitter Saturation
Voltage.
Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base
Voltage
Collector Current
DC Pulse
Base Current
DC
Collector Power Dissipation
Ta=25 Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO
IC
IB
PC
Tj Tstg
RATING 100 100 5 2 4 50 1.
3 20 150
-55 150
UNIT V V V
A
mA
W
C B
Q
A C
K
H
F
...