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MJD112

ON Semiconductor
Part Number MJD112
Manufacturer ON Semiconductor
Description Complementary Darlington Power Transistor
Published Jul 29, 2020
Detailed Description MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for g...
Datasheet PDF File MJD112 PDF File

MJD112
MJD112

Overview
MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular TIP31 and TIP32 Series • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant* http://onsemi.
com SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS, 20 WATTS DPAK CASE 369C DPAK−3 CASE 369D MARKING DIAGRAMS AYWW J11xG YWW J11xG DPAK DPAK−3 A = Assembly Location Y = Year WW = Work Week x = 2 or 7 G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013 1 November, 2013 − Rev.
13 Publication Order Number: MJD112/D MJD112 (NPN), MJD117 (PNP) MAXIMUM RATINGS Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Continuous Peak Rating Symbol VCEO VCB VEB IC Max 100 100 5 2 4 Unit Vdc Vdc Vdc Adc Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C IB 50 mAdc PD W 20 W/°C 0.
16 Total Power Dissipation (Note1) @ TA = 25°C Derate above 25°C PD W 1.
75 W/°C 0.
014 Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
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