MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH11017/D
MJH10012 (See MJ10012)
Complementary Darlington Silicon Power Transistors
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.
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designed for use as general purpose
amplifiers, low frequency switching and motor control applications.
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining
Voltage VCEO(sus) = 150 Vdc (Min) — MJH11018, 17 VCEO(sus) = 200 Vdc (Min) — MJH11020, 19 VCEO(sus) = 250 Vdc (Min) — MJH11022, 21 • Low Collector–Emitter Saturation
Voltage VCE(sat) = 1.
2 V (Typ) @ IC = 5.
0 A VCE(sat) = 1.
8 V (Typ) @ IC = 10 A • Monolithic Construction MAXIMUM RATINGS
MJH11017 * MJH11019 * MJH11021 * MJH11018 * MJH11020 * MJH110...