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MJH11022

Part Number	MJH11022
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 14, 2022
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 250V (Min.) ...
Datasheet	MJH11022 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 250V (Min.
) ·High DC Current Gain : hFE= 400(Min.
)@IC= 10A ·Low Collector Saturation Voltage : VCE (sat)= 1.
0V(Max.
)@ IC= 5.
0A ·Complement to Type MJH11021 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers, low frequency switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 250 VCEO Collector-Emitter Voltage 250 VEBO Emitter-Base Voltage 5 IC Collector Current-Continunous 15 ICM Collector Current-Peak 30 IB...

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