MMBD352WT1G, NSVMMBD352WT1G
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
Features
Very Low Capacitance − Less Than 1.
0 pF @ 0 V Low Forward
Voltage − 0.
5 V (Typ) @ IF = 10 mA AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse
Voltage
VR 7.
0 VCC
Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings onl...