RoHS
MMBT5551LT1
NPN EPITAXIAL SILICON TRANSISTOR
HIGH
VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o)
.
,LTDCollector-Emiller
Voltage:VCEO=160V
SOT-23
1
1.
2.
4 1.
3
3
2 1.
BASE 2.
EMITTER 3.
COLLECTOR
2.
9 1.
9 0.
95 0.
95 0.
4
O Unit:mm
CABSOLUTE MAXIMUM RATINGS ICCharacteristic
Collector-Base
Voltage Collector-Emitter
Voltage
NEmitter-Base
Voltage
Collector Current
OCollector Dissipation Ta=25oC*
Junction Temperature
RStorage Temperature
Symbol
VCBO VCEO VEBO Ic PD Tj Tstg
Rating
180 160
6 600 225 150 -55~150
(Ta=25 oC)
Unit
V V V mA mW
O
C OC
TElectrical Characteristics
(Ta=25 oC)
Parameter
Symbol MIN.
TYP.
MAX.
Unit
Condition
CCollector-Base Breakdown
Voltage
Collector-E...