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MMBT5551LT1

Part Number	MMBT5551LT1
Manufacturer	TGS
Description	NPN Transistor
Published	Aug 25, 2016
Detailed Description	TIGER ELECTRONIC CO.,LTD MMBT5551LT1 NPN EPITAXIAL PLANAR TRANSISTOR Description The MMBT5551LT1 is designed for gener...
Datasheet	MMBT5551LT1 PDF File

Overview

TIGER ELECTRONIC CO.
,LTD MMBT5551LT1 NPN EPITAXIAL PLANAR TRANSISTOR Description The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages.
Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.
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-55+150°C Junction Temperature +150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage.
...

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