MMBT7002
N-Channel Enhancement Mode Field Effect Transistor
Features • High density cell design for low RDS(ON) •
Voltage controlled small signal switching
• High saturation current capability • High speed switching
Gate
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain-Source
Voltage
Drain-Gate
Voltage (RGS ≤ 1MΩ)
Gate-Source
Voltage
-Continuous -Non Repetitive (tp 50 µs)
Maximum Drain Current -Continuous -Pulsed
Total Power Dissipation
Operating and Storage Temperature Range
Drain
Source
Symbol VDSS VDGR VGSS ID Ptot TJ, Ts
1.
Gate 2.
Source 3.
Drain SOT-23 Plastic Package
Value
60
60 ± 20 ± 40 115 800
200
- 55 to + 150
Unit V V V
mA
mW OC
Characteristics at Ta = 25 OC
Pa...