DatasheetsPDF.com

MMBT7002

Diotec
Part Number MMBT7002
Manufacturer Diotec
Description N-Channel MOSFET
Published May 22, 2016
Detailed Description MMBT7002 MMBT7002 N N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor - Anreicherungst...
Datasheet PDF File MMBT7002 PDF File

MMBT7002
MMBT7002

Overview
MMBT7002 MMBT7002 N N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor - Anreicherungstyp Version 2011-02-01 2.
9 ±0.
1 0.
4 3 Type Code 1 2 1.
1 1.
9 Dimensions - Maße [mm] 1=G 2=S 3=D 2.
5 max 1.
3±0.
1 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx.
– Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle N 200 mW SOT-23 (TO-236) 0.
01 g Maximum ratings (TA = 25°C) Drain-Source-voltage – Drain-Source-Spannung Drain-Gate-voltage – Drain-Gate-Spannung RGS ≤ 1 MΩ Gate-Source-voltage – Gate-Source-Spannung dc tp < 50 µs Power dissipation – Verlustleistung Drain current continuos – Drainstrom (dc) Peak Drain current – Drain-Spitzenstrom Operating Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur VDSS VDGR VGSS VGSS Ptot ID IDM Tj TS Grenzwerte (TA = 25°C) MMBT7002 60 V 60 V ± 20 V ± 40 V 200 mW 115 mA 800 mA 150°C -55…+150°C © Diotec Semiconductor AG http://www.
diotec.
com/ 1 MMBT7002 Characteristics (Tj = 25°C) Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 10 µA Drain-Source leakage current – Drain-Source-Leckstrom BVDSS G short VDS = 60 V Gate-Body leakage current – Gate-Substrat-Leckstrom IDSS VGS = 20 V Gate-Threshold voltage – Gate-Source Schwellspannung ±IGSS VGS = VDS, ID = 250 µA Drain-Source on-voltage – Drain-Source-Spannung VGS(th) VGS = 10 V, ID = 500 mA VGS = 5 V, ID = 50 mA VDS(on) Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V, ID = 500 mA Forward Transconductance – Übertragungssteilheit VDS ≥ 10 VDS(on), ID = 200 mA Input Capacitance – Eingangskapazität RDS(on) gFS VDS = 25 V, f = 1 MHz Output Capacitance – Ausgangskapazität Ciss VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance – Rückwirkungskapazität Coss VDS = 25 V, f = 1 MHz Turn-On Time – Ein...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)