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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub–Micron
MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs
Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz.
Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
To be used in class A and class AB for PCN–PCS/cellular radio and wireless local loop.
• Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts (PEP) Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = –29 dBc • Typical Single–Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts (CW) Power Gain ...