MSN0880H
75V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 75V,ID =80A RDS(ON) 8mΩ @ VGS=10V（Typ：6.
5mΩ）
● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-247 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Dev...