NTE2305 (NPN) & NTE2306 (PNP) Silicon Complementary Transistors High
Voltage Power Amplifier
Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high
voltage switching regulator circuits.
Features: D High Collector–Emitter Sustaining
Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector–Emitter Saturation
Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector–Emitter
Voltage, VCEO .
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160V Collector–Base
Voltage, VCB .
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