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NTE2307

NTE
Part Number NTE2307
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Powe...
Datasheet PDF File NTE2307 PDF File

NTE2307
NTE2307

Overview
NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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200V Collector–Emitter Voltage, VCEO .
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180V Emitter–Base Voltage, VEBO .
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5V Collector Current, IC .
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5A Base Current, IB .
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2A Collector Power Dissipation (TC = +25°C), PC .
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80W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector–Emitter Breakdown Voltage DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Voltage Symbol ICBO ICEO IEBO hFE VCE(sat) VBE Test Conditions VCB = 200V, IE = 0 VCE = 180V, IB = 0 VEB = 5V, IC = 0 VCB = 5V, IC = 1A IC = 1A, IB = 20mA VCE = 5V, IC = 1A Min – – – 180 500 – 0.
6 Typ – – – – – – 0.
7 Max 100 10 100 – 2000 1.
0 0.
8 V V Unit µA mA µA V V(BR)CEO IC = 50mA, IB = 0 .
190 (4.
82) .
615 (15.
62) C .
787 (20.
0) .
591 (15.
02) .
126 (3.
22) Dia .
787 (20.
0) B C E .
215 (5.
47) ...


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