NX2301P
20 V, 2 A P-channel Trench
MOSFET
Rev.
1 — 26 October 2010 Product data sheet
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Product profile
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1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
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2 Features and benefits
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8 V RDSon rated for Low
Voltage Gate Drive Very fast switching Trench
MOSFET technology AEC-Q101 qualified
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3 Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
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4 Quick reference data
Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source
voltage gate-source
voltage drain current drain-source on-s...