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NX2301P

nexperia
Part Number NX2301P
Manufacturer nexperia
Description P-channel MOSFET
Published Jul 3, 2019
Detailed Description NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General ...
Datasheet PDF File NX2301P PDF File

NX2301P
NX2301P

Overview
NX2301P 20 V, 2 A P-channel Trench MOSFET Rev.
1 — 26 October 2010 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits „ 1.
8 V RDSon rated for Low Voltage Gate Drive „ Very fast switching „ Trench MOSFET technology „ AEC-Q101 qualified 1.
3 Applications „ Relay driver „ High-speed line driver „ High-side loadswitch „ Switching circuits 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = −4.
5 V Tj = 25 °C; VGS = −4.
5 V; ID = −1 A - - −20 V - - ±8 V [1] - - −2 A [2] - 100 120 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s.
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