P0660ATF
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.
25Ω @VGS = 10V
ID 6A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage Gate-Source
Voltage
VDS 600 VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
L = 10mH
ID
IDM IAS EAS
6 4.
3 20 5 134
Power DissipationA
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
39 15.
6 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum jun...