PBSS4112PAN
29 November 2012
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
Product data sheet
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Product profile
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1 General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4112PANP.
PNP/PNP complement: PBSS5112PAP.
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2 Features and benefits • Very low collector-emitter saturation
voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • AEC-Q101 qualified 1.
3 Applications • Load switch • ...