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PBSS4112PAN

nexperia
Part Number PBSS4112PAN
Manufacturer nexperia
Description 1A NPN/NPN low VCEsat (BISS) transistor
Published Jul 5, 2019
Detailed Description PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 29 November 2012 Product data sheet 1. Product profile ...
Datasheet PDF File PBSS4112PAN PDF File

PBSS4112PAN
PBSS4112PAN

Overview
PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 29 November 2012 Product data sheet 1.
Product profile 1.
1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4112PANP.
PNP/PNP complement: PBSS5112PAP.
1.
2 Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • AEC-Q101 qualified 1.
3 Applications • Load switch • Battery-driven devices • Power management • Charging circuits • Power switches (e.
g.
motors, fans) 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Per transistor VCEO collector-emitter voltage IC collector current ICM peak collector current Per transistor RCEsat...


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