PBSS4360Z
26 February 2014
SO T2
23
60 V, 3 A NPN low VCEsat (BISS) transistor
Product data sheet
1.
General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5360Z.
2.
Features and benefits
• • • •
Low collector-emitter saturation
voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified
3.
Applications
• • • • • •
DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply
voltage applications (e.
g.
lamps and LEDs) Inductive load driver (e.
g.
relays, buzze...