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PBSS4360Z

nexperia
Part Number PBSS4360Z
Manufacturer nexperia
Description NPN transistor
Published Jul 21, 2019
Detailed Description PBSS4360Z 60 V, 3 A NPN low VCEsat (BISS) transistor 26 February 2014 Product data sheet 1. General description NPN lo...
Datasheet PDF File PBSS4360Z PDF File

PBSS4360Z
PBSS4360Z

Overview
PBSS4360Z 60 V, 3 A NPN low VCEsat (BISS) transistor 26 February 2014 Product data sheet 1.
General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5360Z.
2.
Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High energy efficiency due to less heat generation • AEC-Q101 qualified 3.
Applications • DC-to-DC conversion • Supply line switching • Battery charger • LCD backlighting • Driver in low supply voltage applications (e.
g.
lamps and LEDs) • Inductive load driver (e.
g.
relays, buzzers and motors) 4.
Quick reference data Table 1.
Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current tp ≤ 1 ms; single pulse collector-emitter saturation resistance IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ...


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