PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
7 April 2015
Product data sheet
1.
General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN complement: PBSS4330PA.
2.
Features and benefits
• Low collector-emitter saturation
voltage VCEsat • High collector current capability IC and ICM • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors • Exposed heat sink for excellent thermal and electrical conductivity • Leadless small SMD plastic package with medium power capability
3.
Applications
• Loadsw...