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PBSS5330PA

NXP
Part Number PBSS5330PA
Manufacturer NXP
Description 3A PNP low VCEsat (BISS) transistor
Published Jun 29, 2010
Detailed Description HUSON3 PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description P...
Datasheet PDF File PBSS5330PA PDF File

PBSS5330PA
PBSS5330PA

Overview
HUSON3 PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1.
General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN complement: PBSS4330PA.
2.
Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors • Exposed heat sink for excellent thermal and electrical conductivity • Leadless small SMD plastic package with medium power capability 3.
Applications ...


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