PMDPB95XNE2
30 V, dual N-channel Trench
MOSFET
14 June 2016
Product data sheet
1.
General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Very fast switching • Trench
MOSFET technology • Leadless medium power SMD plastic package: 2 × 2 × 0.
65 mm • Exposed drain pad for excellent thermal conduction • EletroStatic Discharge (ESD) protection 2 kV HBM
3.
Applications
• Charging switch for portable devices • DC-to-DC converters • Small brushless DC motor drive • Power management in battery-driven portables • Hard disk a...