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PMDPB95XNE

NXP Semiconductors
Part Number PMDPB95XNE
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 18, 2014
Detailed Description PMDPB95XNE 26 September 2012 30 V dual N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General desc...
Datasheet PDF File PMDPB95XNE PDF File

PMDPB95XNE
PMDPB95XNE

Overview
PMDPB95XNE 26 September 2012 30 V dual N-channel Trench MOSFET Product data sheet 1.
Product profile 1.
1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits • Very fast switching • Trench MOSFET technology • Leadless medium power SMD plastic package: 2 × 2 × 0.
6 mm • Exposed drain pad for excellent thermal conduction • ESD protection up to 1.
8 kV 1.
3 Applications • Charging switch for portable devices • DC-to-DC converters • Small brushless DC motor drive • Power management in battery-driven portables • Hard di...


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