SOT883
PMZ350UPE
20 V, P-channel Trench
MOSFET
14 May 2014
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Trench
MOSFET technology • Low threshold
voltage • Very fast switching • ElectroStatic Discharge (ESD) protection 1.
8 kV HBM • Leadless ultra small SMD plastic package: 1.
0 × 0.
6 × 0.
48 mm
3.
Applications
• Relay driver • High-speed line driver • High-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min Typ M...