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PMZ350UPE

nexperia
Part Number PMZ350UPE
Manufacturer nexperia
Description P-channel MOSFET
Published Jul 28, 2019
Detailed Description PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mo...
Datasheet PDF File PMZ350UPE PDF File

PMZ350UPE
PMZ350UPE

Overview
PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 1.
8 kV HBM • Leadless ultra small SMD plastic package: 1.
0 × 0.
6 × 0.
48 mm 3.
Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit ...


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