SOT883B
PMZB200UNE
30 V, N-channel Trench
MOSFET
12 March 2015
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Very fast switching • Low threshold
voltage • Trench
MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Ultra thin package profile of 0.
37 mm
3.
Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source
voltage
VGS gate-source v...