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PMZB200UNE

nexperia
Part Number PMZB200UNE
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description PMZB200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement...
Datasheet PDF File PMZB200UNE PDF File

PMZB200UNE
PMZB200UNE

Overview
PMZB200UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Ultra thin package profile of 0.
37 mm 3.
Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.
5 V; Tamb = 25 °C VGS = 4.
5 V; ID = 1.
4 A; Tj = 25 °C Min Typ Max Unit - - 30 V -8 - 8V [1] - - 1.
4 A - 210 250 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated ...


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