Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN009-100W FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 100 A g RDS(ON) ≤ 9 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package.
PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTIO...

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