PSMN6R0-30YL
N-channel 30 V 6 mΩ logic level
MOSFET in LFPAK
Rev.
04 — 10 March 2011
Product data sheet
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Product profile
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1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in industrial and communications applications.
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2 Features and benefits
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
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3 Applications
Class-D
amplifiers DC-to-DC converters
Motor control Server power supplies
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4 Quick reference data
Table 1.
Quick reference data
Symbol VDS ID
Parameter drain-source vol...