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PSMN6R0-30YL

NXP Semiconductors
Part Number PSMN6R0-30YL
Manufacturer NXP Semiconductors
Description N-channel FET
Published Aug 7, 2009
Detailed Description www.DataSheet4U.com PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet...
Datasheet PDF File PSMN6R0-30YL PDF File

PSMN6R0-30YL
PSMN6R0-30YL

Overview
www.
DataSheet4U.
com PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev.
01 — 10 September 2008 Preliminary data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in industrial and communications applications.
1.
2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.
3 Applications „ Class-D amplifiers „ DC-to-DC converters „ Motor control „ Server power supplies 1.
4 Quick reference data Table 1.
VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min Typ Max 30 73 55 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 4.
5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12 3.
08 nC Static characteristics RDSon drain-source on-state resistance 4.
8 6 mΩ w w w .
D a t a S h e e t 4 U .
c o m NXP Semiconductors PSMN6R0-30YL N-channel TrenchMOS logic level FET 2.
Pinning information Table 2.
Pin 1 2 3 4 mb S S S G D Pinning information Symbol Description source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 1 2 3 4 SOT669 (LFPAK) 3.
Ordering information Table 3.
Ordering information Type number Package Name PSMN6R0-30YL LFPAK Description Version Plastic single-ended surface-mounted package (LFPAK); SOT669 4 leads 4.
Limiting values Table 4.
Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche en...


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