Part Number
|
PTF080901F |
Manufacturer
|
Infineon Technologies AG |
Description
|
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Published
|
Apr 16, 2005 |
Detailed Description
|
PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matc...
|
Datasheet
|
PTF080901F
|
Overview
PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metallization ensures excellent device lifetime and reliability.
Features
• • Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
EDGE Modulation Spectrum Performan...
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