RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0512-0100 Rev.
1.
00 Jan.
14.
2005
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
LDPAK
D 4 4 4
G 1
1
2
3
1
S
3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ
2
1.
Gate 2.
Drain 3.
Source 4.
Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source
voltage Gate to Source
voltage Drain current www.
DataSheet4U.
com Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, ...