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RJK2006DPJ

Renesas Technology
Part Number RJK2006DPJ
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Dec 1, 2009
Detailed Description RJK2006DPJ, RJK2006DPE, RJK2006DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0512-0100 Rev.1.00 Jan.14....
Datasheet PDF File RJK2006DPJ PDF File

RJK2006DPJ
RJK2006DPJ

Overview
RJK2006DPJ, RJK2006DPE, RJK2006DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0512-0100 Rev.
1.
00 Jan.
14.
2005 Features • Low on-resistance • Low leakage current • High speed switching Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ 2 1.
Gate 2.
Drain 3.
Source 4.
Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current www.
DataSheet4U.
com Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, ...


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