Data Sheet
4V Drive Nch
MOSFET
RSD175N10
Structure Silicon N-channel
MOSFET
Features 1) Low on-resistance.
4) 4V drive.
4) High power package.
Application Switching
Dimensions (Unit : mm)
CPT3
(SC-63) SOT-428
6.
5 5.
1
2.
3 0.
5
0.
9 5.
5 1.
5
0.
75
0.
9 2.
3
(1) (2)
0.
65 (3) 2.
3
0.
8Min.
2.
5
0.
5 1.
0
1.
5 9.
5
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RSD175N10
Taping TL
2500
Inner circuit
∗1
∗2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source
voltage Gate-source
voltage
Drain current
Source current (Body Diode) Power dissipation Channel temperature
Continuous Pulsed Continuous Pulsed
VDSS VGSS
ID *3 IDP *1 IS *3 ISP *...