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RSD175N10FRA

ROHM
Part Number RSD175N10FRA
Manufacturer ROHM
Description Power MOSFET
Published Feb 10, 2017
Detailed Description RSD175N10FRA 　　 Nch 100V 17.5A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 100V 105mΩ ±17.5A 20W lFeatures 1)...
Datasheet PDF File RSD175N10FRA PDF File

RSD175N10FRA
RSD175N10FRA


Overview
RSD175N10FRA 　　 Nch 100V 17.
5A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.
) ID PD 100V 105mΩ ±17.
5A 20W lFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant 6) AEC-Q101 Qualified lOutline TO-252 SC-63 CPT3 　 　　　　　　 lInner circuit 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) 175N10 Parameter Symbol Value Unit Drain - Source voltage VDSS 100 V Continuous drain current ID*1 ±17.
5 A Pulsed drain current IDP*2 ±35 A Gate - Source voltage VGSS ±20 V Power dissipation PD*3 20 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　　　　　　　　　　　　　　　　　　　　　　　 　　　　　　　　　　　　　　　　　　　　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
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com © 2017 ROHM Co.
, Ltd.
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1/11 20170706 - Rev.
001 　 　 RSD175N10FRA 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC*3 Values Min.
Typ.
Max.
- - 6.
25 Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient 　ΔV(BR)DSS　 ID = 1mA 　　 ΔTj 　 　 referenced to 25℃ Zero gate voltage drain current IDSS VDS = 100V, VGS = 0V Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) VDS = 10V , ID = 1mA 　ΔVGS(th) 　 ID = 1mA 　　 ΔTj 　 　 referenced to 25℃ Static drain - source on - state resistance VGS = 10V, ID = 8.
8A RDS(on)*4 VGS = 4.
5V, ID = 8.
8A VGS = 4V, ID = 8.
8A Gate resistance RG f = 1MHz, open drain Forward...


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