SEMB1
PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor (R1=22kΩ, R2 =22kΩ)
C1 6 B2 5 E2 4
4 5 3 6 1 2
R2 R1 TR1 R2 1 E1 2 B1 3 C2
EHA07173
TR2 R1
Type SEMB1 Maximum Ratings Parameter
Marking WO
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg
Value 50 50 10 30 100 250 150 -65 .
.
.
150
Unit V
Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Input on
Voltage DC collector current Total power dissipation , TS = 75 °C Junction tempe...