www.
DataSheet4U.
com Preliminary SIGC109T120R3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC109T120R3 VCE ICn Die Size 10.
47 x 10.
44 mm2 Package sawn on foil Ordering Code Q67050A4108-A001 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 10.
4...

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