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SIGC109T120R3L

Infineon Technologies
Part Number SIGC109T120R3L
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com SIGC109T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-o...
Datasheet PDF File SIGC109T120R3L PDF File

SIGC109T120R3L
SIGC109T120R3L

Overview
www.
DataSheet4U.
com SIGC109T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC109T120R3L VCE ICn Die Size 10.
47 x 10.
44 mm2 Package sawn on foil Ordering Code Q67050A4210-A101 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended S...


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