Part Number
|
SIGC42T120C |
Manufacturer
|
Infineon Technologies |
Description
|
IGBT |
Published
|
Sep 15, 2007 |
Detailed Description
|
IGBT Chip in NPT-technology
Features: 1200V NPT technology low turn-off losses positive temperature coefficient ...
|
Datasheet
|
SIGC42T120C
|
Overview
IGBT Chip in NPT-technology
Features: 1200V NPT technology low turn-off losses positive temperature coefficient easy paralleling
SIGC42T120C
This chip is used for: power module
BUP 314
Applications: drives
C G
E
Chip Type SIGC42T120C
VCE
IC
1200V 25A
Die Size 6.
59 x 6.
49 mm2
Package sawn on foil
Mechanical Parameter Raster size Emitter pad size Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
6.
59 x 6.
49
2 x ( 1.
58 x 2.
18 ) 1.
06 x 0.
65
mm2
42.
8
200 µm
150 mm
334
Photoimide
3200 nm AlSiCu
Ni Ag –system suitable for epox...
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