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SIGC42T120CQ

Infineon Technologies
Part Number SIGC42T120CQ
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com SIGC42T120CQ IGBT Chip in Fieldstop -technology FEATURES: • 1200V Fieldstop technology 120µm chip •...
Datasheet PDF File SIGC42T120CQ PDF File

SIGC42T120CQ
SIGC42T120CQ

Overview
www.
DataSheet4U.
com SIGC42T120CQ IGBT Chip in Fieldstop -technology FEATURES: • 1200V Fieldstop technology 120µm chip • low turn-off losses • short tail current • positive temperature coefficient This chip is used for: • IGBT Modules Applications: • welding, SMPS, resonant applications C G E Chip Type SIGC42T120CQ VCE 1200V ICn 25A Die Size 6.
59 x 6.
49 mm2 Package sawn on foil Ordering Code SP0002-04966 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.
59 x 6.
49 2 x (2.
18 x 1.
58) 1.
06 x 0.
65 42.
8 / 33.
5 120 150 90 332 pcs Photoimide 3200 nm Al Si Cu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm grd mm 2 Edited by INFINEON Technologies AIM PMD D CID CLS, L7151Q, Rev.
1.
1, 20.
12.
2005 SIGC42T120CQ MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 75 ±20 -55 .
.
.
+150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES Conditions VGE=0V , IC= 1.
5mA VGE=15V, IC =25A IC =1mA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V Value min.
1200 2.
1 5.
5 3 120 µA nA V typ.
max.
Unit ELECTRICAL CHARACTERISTICS (tested at compo...


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